X-On Electronics has gained recognition as a prominent supplier of NTK3134NT1H MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTK3134NT1H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTK3134NT1H ON Semiconductor

NTK3134NT1H electronic component of ON Semiconductor
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Part No.NTK3134NT1H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: NTK3134NT1H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12000: USD 0.0375 ea
Line Total: USD 450 
Availability - 0
MOQ: 12000  Multiples: 12000
Pack Size: 12000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 12000
Multiples : 12000
12000 : USD 0.0375
24000 : USD 0.0352
48000 : USD 0.0315

   
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RoHS - XON
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Id - Continuous Drain Current
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Rds On - Drain-Source Resistance
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We are delighted to provide the NTK3134NT1H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTK3134NT1H and other electronic components in the MOSFETs category and beyond.

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NTK3134N MOSFET Power, Single, N-Channel with ESD Protection, SOT-723 20 V, 890 mA www.onsemi.com Features V R TYP I Max (BR)DSS DS(on) D NChannel Switch with Low R DS(on) 0.20 4.5 V 890 mA 44% Smaller Footprint and 38% Thinner than SC89 0.26 2.5 V 790 mA Low Threshold Levels Allowing 1.5 V R Rating DS(on) 20 V 0.43 1.8 V 700 mA Operated at Low Logic Level Gate Drive 0.56 1.5 V 200 mA These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT723 (3LEAD) Applications 3 Load/Power Switching Interface Switching Logic Level Shift Battery Management for Ultra Small Portable Electronics MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit 12 1 Gate DraintoSource Voltage V 20 V 2 Source DSS Top View 3 Drain GatetoSource Voltage V 8 V GS Continuous Drain Steady I mA T = 25C 890 A D Current (Note 1) State MARKING DIAGRAM T = 85C 640 A t 5 s T = 25C 990 A KF M Power Dissipation Steady T = 25C P 450 mW A D (Note 1) State SOT723 1 CASE 631AA t 5 s 550 STYLE 5 KF = Specific Device Code Continuous Drain Steady T = 25C I 750 mA A D M = Date Code Current (Note 2) State T = 85C 540 A Power Dissipation T = 25C P 310 mW A D ORDERING INFORMATION (Note 2) Pulsed Drain t = 10 s I 1.8 A p DM Device Package Shipping Current NTK3134NT1G SOT723 4000 / Tape & Reel Operating Junction and Storage T , T 55 to C J STG NTK3134NT5G SOT723 8000 / Tape & Reel Temperature 150 For information on tape and reel specifications, Lead Temperature for Soldering Purposes T 260 C L including part orientation and tape sizes, please (1/8 from case for 10 s) refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) 2. Surface mounted on FR4 board using the minimum recommended pad size Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 4 NTK3134N/DNTK3134N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 280 C/W JA JunctiontoAmbient t = 5 s (Note 3) R 228 JA JunctiontoAmbient Steady State Minimum Pad (Note 4) R 400 JA 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown V V = 0 V, I = 250 A 20 V (BR)DSS GS D Voltage DraintoSource Breakdown V /T I = 250 A, Reference to 25C 18 mV/C (BR)DSS J D Voltage Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 16 V DS T = 125C 2.0 J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 0.5 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 2.4 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 890 mA 0.20 0.35 DS(on) GS D V = 2.5 V, I = 780 mA 0.26 0.45 GS D V = 1.8 V, I = 700 mA 0.43 0.65 GS D V = 1.5 V, I = 200 mA 0.56 1.2 GS D Forward Transconductance g V = 10 V, I = 800 mA 1.6 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, V = 16 V 79 120 pF ISS GS DS Output Capacitance C 13 20 OSS Reverse Transfer Capacitance C 9.0 15 RSS SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS Turn On Delay Time t V = 4.5 V, V = 10 V, I = 500 mA, 6.7 ns GS DS D d(ON) R = 10 G Rise Time t 4.8 r TurnOff Delay Time t 17.3 d(OFF) Fall Time t 7.4 f DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 350 mA T = 25C 0.75 1.2 V SD GS S J Reverse Recovery Time t V = 0 V, d /d = 100 A/ s, 8.1 ns RR GS ISD t I = 1.0 A, V = 20 V S DD Charge Time t 6.4 a Discharge Time t 1.7 b Reverse Recovery Charge Q 3.0 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 s, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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