NTK3139P MOSFET Power, Single, P-Channel with ESD Protection, SOT-723 -20 V, -780 mA www.onsemi.com Features V R TYP I Max (BR)DSS DS(on) D Pchannel Switch with Low R DS(on) 0.38 4.5 V 780 mA 44% Smaller Footprint and 38% Thinner than SC89 0.52 2.5 V 660 mA Low Threshold Levels Allowing 1.5 V R Rating DS(on) 20 V 0.70 1.8 V 100 mA Operated at Low Logic Level Gate Drive 0.95 1.5 V 100 mA These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications SOT723 (3LEAD) Load/Power Switching 3 Interfacing, Logic Switching Battery Management for Ultra Small Portable Electronics MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS 12 GatetoSource Voltage V 6 V GS Continuous Drain Steady T = 25C I 780 mA A D Top View 1 Gate Current (Note 1) State T = 85C 570 2 Source A 3 Drain t 5 s T = 25C 870 A Power Dissipation T = 25C P mW Steady 450 A D (Note 1) State MARKING DIAGRAM t 5 s 550 KD M Continuous Drain Steady T = 25C I 660 mA D A Current (Note 2) State SOT723 T = 85C 480 A 1 CASE 631AA Power Dissipation T = 25C P 310 mW A D STYLE 5 KD = Specific Device Code (Note 2) M = Date Code Pulsed Drain Cur- t = 10 s I 1.2 A p DM rent Operating Junction and Storage Tempera- T , T 55 to C J STG ORDERING INFORMATION ture 150 Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) NTK3139PT1G 4000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the NTK3139PT1H device. If any of these limits are exceeded, device functionality should not be SOT723 assumed, damage may occur and reliability may be affected. PbFree NTK3139PT5G 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 8000 / Tape & Reel 1 oz including traces) NTK3139PT5H 2. Surface mounted on FR4 board using the minimum recommended pad size For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2019 Rev. 2 NTK3139P/D NTK3139P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 280 C/W JA JunctiontoAmbient t = 5 s (Note 3) R 228 JA JunctiontoAmbient Steady State Minimum Pad (Note 4) R 400 JA 3. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) 4. Surface mounted on FR4 board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown V 20 (BR)DSS V = 0 V, I = 250 A V GS D Voltage DraintoSource Breakdown V /T 16.5 (BR)DSS J mV/C I = 250 A, Reference to 25C D Voltage Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 DSS J V = 0 V, GS A V = 16V DS T = 125C 2.0 J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.2 V GS(TH) GS DS D Negative Threshold Temperature 2.4 V /T mV/C GS(TH) J Coefficient DraintoSource On Resistance V = 4.5 V, I = 780 mA 0.38 0.48 GS D V = 2.5 V, I = 660 mA 0.52 0.67 GS D R DS(on) V = 1.8 V, I = 100 mA 0.70 0.95 GS D V = 1.5 V, I = 100 mA 0.95 2.20 GS D Forward Transconductance g V = 10 V, I = 540 mA 1.2 S FS DS D Gate Resistance R T = 25C 112 G A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 113 170 ISS Output Capacitance C 15 25 V = 0 V, f = 1 MHz, V = 16 V pF OSS GS DS Reverse Transfer Capacitance C 9.0 15 RSS SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS Turn On Delay Time t 9.0 d(ON) Rise Time t 5.8 r V = 4.5 V, V = 10 V, GS DS ns I = 200 mA, R = 10 D G TurnOff Delay Time t 32.7 d(OFF) Fall Time t 20.3 f DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 350 mA T = 25C 0.8 1.2 V SD GS S J Reverse Recovery Time t 13.2 ns RR Charge Time t 11.8 a V = 0 V, d /d = 100 A/ s, GS ISD t I = 1.0 A, V = 20 V S DD Discharge Time t 1.4 b Reverse Recovery Charge Q 5.0 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle = 2% 6. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2