IRF6613PbF IRF6613TRPbF DirectFET Power MOSFET RoHS Compliant V R max Qg(typ.) Lead-Free (Qualified up to 260C Reflow) DSS DS(on) Application Specific MOSFETs 3.4m V = 10V 40V 42nC GS Ideal for CPU Core DC-DC Converters 4.1m V = 4.5V GS Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description TM The IRF6613PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V 40 Drain-to-Source Voltage V DS Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 150 GS D C 23 I T = 25C Continuous Drain Current, V 10V A GS D A Continuous Drain Current, V 10V 18 I T = 70C A GS D I Pulsed Drain Current 180 DM P T = 25C Power Dissipation 89 D C 2.8 P T = 25C Power Dissipation A D 1.8 W P T = 70C Power Dissipation A D E Single Pulse Avalanche Energy 200 mJ AS 18 I Avalanche Current A AR 0.022 Linear Derating Factor W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient 45 JA R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 1.4 JC R Junction-to-PCB Mounted 1.0 J-PCB Notes through are on page 2 www.irf.com 1 7/3/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 38 mV/C Reference to 25C, I = 1mA DSS J D R m Static Drain-to-Source On-Resistance 2.6 3.4 V = 10V, I = 23A DS(on) GS D 3.1 4.1 V = 4.5V, I = 18A GS D V Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 32V, V = 0V DSS DS GS 150 V = 32V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 93 S V = 15V, I = 18A DS D Q Total Gate Charge 42 63 g Q Pre-Vth Gate-to-Source Charge 11.5 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 3.3 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 12.6 I = 18A gd D Q Gate Charge Overdrive 14.6 See Fig. 6 and 16 godr Q Switch Charge (Q + Q ) 15.9 sw gs2 gd Q Output Charge 22 nC V = 16V, V = 0V oss DS GS t Turn-On Delay Time 18 V = 16V, V = 4.5V d(on) DD GS t Rise Time 47 I = 18A r D t Turn-Off Delay Time 27 ns Clamped Inductive Load d(off) t Fall Time 4.9 f C Input Capacitance 5950 V = 0V iss GS C Output Capacitance 990 pF V = 15V oss DS C Reverse Transfer Capacitance 460 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 110 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 180 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 38 57 ns T = 25C, I = 18A rr J F Q Reverse Recovery Charge 42 63 nC di/dt = 100A/s rr Surface mounted on 1 in. square Cu board. Click on this section to link to the appropriate technical paper. Used double sided cooling, mounting pad. Click on this section to link to the DirectFET Website. Mounted on minimum footprint full size board with metalized Repetitive rating pulse width limited by max. junction temperature. back and with small clip heatsink. Starting T = 25C, L = 1.2mH, R = 25, I = 18A. J G AS T measured with thermal couple mounted to top (Drain) of part. Pulse width 400s duty cycle 2%. C R is measured at 2 www.irf.com