X-On Electronics has gained recognition as a prominent supplier of IRF6613TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF6613TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF6613TRPBF Infineon

IRF6613TRPBF electronic component of Infineon
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See Product Specifications
Part No.IRF6613TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Datasheet: IRF6613TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0585 ea
Line Total: USD 2.06 
Availability - 1862
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.165
10 : USD 1.8876
30 : USD 1.7226
100 : USD 1.5564
500 : USD 1.4791
1000 : USD 1.4445

1862
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.0585
10 : USD 1.5755
100 : USD 1.196
500 : USD 1.0867
1000 : USD 1.0442
9600 : USD 1.0431

4656
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 29
Multiples : 1
29 : USD 1.417
50 : USD 1.4122
100 : USD 1.3877
200 : USD 1.3845
500 : USD 1.3812

699
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 7
Multiples : 1
7 : USD 1.2109

3511
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 7
Multiples : 1
7 : USD 2.7866
10 : USD 2.1213
100 : USD 1.5053
500 : USD 1.2689
1000 : USD 1.1498
4800 : USD 1.1194

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Package / Case
Packaging
Qg - Gate Charge
Tradename
Brand
Factory Pack Quantity :
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We are delighted to provide the IRF6613TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF6613TRPBF and other electronic components in the MOSFETs category and beyond.

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IRF6613PbF IRF6613TRPbF DirectFET Power MOSFET RoHS Compliant V R max Qg(typ.) Lead-Free (Qualified up to 260C Reflow) DSS DS(on) Application Specific MOSFETs 3.4m V = 10V 40V 42nC GS Ideal for CPU Core DC-DC Converters 4.1m V = 4.5V GS Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description TM The IRF6613PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V 40 Drain-to-Source Voltage V DS Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 150 GS D C 23 I T = 25C Continuous Drain Current, V 10V A GS D A Continuous Drain Current, V 10V 18 I T = 70C A GS D I Pulsed Drain Current 180 DM P T = 25C Power Dissipation 89 D C 2.8 P T = 25C Power Dissipation A D 1.8 W P T = 70C Power Dissipation A D E Single Pulse Avalanche Energy 200 mJ AS 18 I Avalanche Current A AR 0.022 Linear Derating Factor W/C T Operating Junction and -40 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Ambient 45 JA R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 1.4 JC R Junction-to-PCB Mounted 1.0 J-PCB Notes through are on page 2 www.irf.com 1 7/3/06 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 38 mV/C Reference to 25C, I = 1mA DSS J D R m Static Drain-to-Source On-Resistance 2.6 3.4 V = 10V, I = 23A DS(on) GS D 3.1 4.1 V = 4.5V, I = 18A GS D V Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 32V, V = 0V DSS DS GS 150 V = 32V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 93 S V = 15V, I = 18A DS D Q Total Gate Charge 42 63 g Q Pre-Vth Gate-to-Source Charge 11.5 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 3.3 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 12.6 I = 18A gd D Q Gate Charge Overdrive 14.6 See Fig. 6 and 16 godr Q Switch Charge (Q + Q ) 15.9 sw gs2 gd Q Output Charge 22 nC V = 16V, V = 0V oss DS GS t Turn-On Delay Time 18 V = 16V, V = 4.5V d(on) DD GS t Rise Time 47 I = 18A r D t Turn-Off Delay Time 27 ns Clamped Inductive Load d(off) t Fall Time 4.9 f C Input Capacitance 5950 V = 0V iss GS C Output Capacitance 990 pF V = 15V oss DS C Reverse Transfer Capacitance 460 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 110 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 180 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 18A, V = 0V SD J S GS t Reverse Recovery Time 38 57 ns T = 25C, I = 18A rr J F Q Reverse Recovery Charge 42 63 nC di/dt = 100A/s rr Surface mounted on 1 in. square Cu board. Click on this section to link to the appropriate technical paper. Used double sided cooling, mounting pad. Click on this section to link to the DirectFET Website. Mounted on minimum footprint full size board with metalized Repetitive rating pulse width limited by max. junction temperature. back and with small clip heatsink. Starting T = 25C, L = 1.2mH, R = 25, I = 18A. J G AS T measured with thermal couple mounted to top (Drain) of part. Pulse width 400s duty cycle 2%. C R is measured at 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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