IPD60N10S4-12 TM OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R 12.2 m W DS(on),max I 60 A D Features N-channel - Normal Level - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260C peak reflow 175C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Drain pin 2/Tab Gate Type Package Marking pin 1 IPD60N10S4-12 PG-TO252-3-313 4N1012 Source pin 3 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 60 A D C GS 1) T =100C, V =10V 43 C GS 1) I T =25C 240 Pulsed drain current D,pulse C 1) E I =30A 120 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 40 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 94 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-30 IPD60N10S4-12 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 1.6 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 100 - - V (BR)DSS GS D V V =V , I =46A Gate threshold voltage 2.0 2.7 3.5 GS(th) DS GS D I V =100V, V =0V Zero gate voltage drain current - 0.01 1 A DSS DS GS V =100V, V =0V, DS GS - 1 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =60A Drain-source on-state resistance - 10.4 12.2 m W DS(on) GS D Rev. 1.0 page 2 2014-06-30