X-On Electronics has gained recognition as a prominent supplier of IPD50N06S409ATMA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD50N06S409ATMA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD50N06S409ATMA2 Infineon

IPD50N06S409ATMA2 electronic component of Infineon
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Part No.IPD50N06S409ATMA2
Manufacturer: Infineon
Category: MOSFETs
Description: 60V 50A 9mO@50A,10V 71W N Channel TO-252-3-11 MOSFETs ROHS
Datasheet: IPD50N06S409ATMA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9914 ea
Line Total: USD 0.99 
Availability - 3169
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3169
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9914
10 : USD 0.8456
25 : USD 0.8443
100 : USD 0.7016
250 : USD 0.7008
500 : USD 0.6833
1000 : USD 0.6657
3000 : USD 0.6482

19
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0649
10 : USD 1.0401
30 : USD 1.0248
100 : USD 1.0076

   
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We are delighted to provide the IPD50N06S409ATMA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD50N06S409ATMA2 and other electronic components in the MOSFETs category and beyond.

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IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 50 A D C GS 2) 47 T =100C, V =10V C GS 2) I T =25C 200 Pulsed drain current D,pulse C 2) E I =25A 87 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 50 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 71 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.2 page 1 2009-07-01IPD50N06S4-09 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 2.1 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =34A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =50A Drain-source on-state resistance - 7.1 9.0 m DS(on) GS D Rev. 1.2 page 2 2009-07-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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