X-On Electronics has gained recognition as a prominent supplier of XP161A11A1PR-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP161A11A1PR-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

XP161A11A1PR-G Torex Semiconductor

XP161A11A1PR-G electronic component of Torex Semiconductor
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Part No.XP161A11A1PR-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET, 30V, 4A, N-Type, SOT-89
Datasheet: XP161A11A1PR-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.8164
10 : USD 0.8742
100 : USD 0.4872
250 : USD 0.4531
500 : USD 0.3857
1000 : USD 0.3077
2000 : USD 0.2788
5000 : USD 0.2629
10000 : USD 0.2543
N/A

Shipping Restricted
0
MOQ : 1
Multiples : 1
1 : USD 1.1242
25 : USD 0.6468
39 : USD 0.4242
105 : USD 0.4004
N/A

Shipping Restricted
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the XP161A11A1PR-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP161A11A1PR-G and other electronic components in the MOSFETs category and beyond.

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XP161A11A1PR-G ETR1122 003 Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on)=0.065 Vgs=10V Notebook PCs : Rds(on)=0.105 Vgs=4.5V Ultra High-Speed Switching Cellular and portable phones Gate Protect Diode Built-in On-board power supplies Driving Voltage : 4.5V N-Channel Power MOSFET Li-ion battery systems DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAME MARKING PRODUCTS PACKAGE ORDER UNIT XP161A11A1PR SOT-89 1,000/Reel (*) G : Gate XP161A11A1PR-G SOT-89 1,000/Reel S : Source (*) The -G suffix denotes Halogen and Antimony free as well as D : Drain being fully RoHS compliant. * x represents production lot number. ABSOLUTE MAXIMUM RATINGS Ta = 25 EQUIVALENT CIRCUIT PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 30 V Gate - Source Voltage Vgss 20 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 Storage Temperature Tstg -55~150 * When implemented on a ceramic PCB 1/5 1 1 1 x XP161A11A1PR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds=30V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 20V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 2.5 V Id= 2A, Vgs= 10V - 0.05 0.065 Drain-Source On-State Resistance*1 Rds(on) Id= 2A, Vgs= 4.5V - 0.075 0.105 Forward Transfer Admittance *1 Yfs Id= 2A, Vds= 10V - 5.5 - S Body Drain Diode Vf If= 4A, Vgs= 0V - 0.85 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 270 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 150 - pF f= 1MHz Feedback Capacitance Crss - 55 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id=2A Vdd= 10V Turn-Off Delay Time td (off) - 35 - ns Fall Time tf - 15 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 62.5 - /W (Channel-Ambience) 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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