XP161A11A1PR-G ETR1122 003 Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES APPLICATIONS Low On-State Resistance : Rds(on)=0.065 Vgs=10V Notebook PCs : Rds(on)=0.105 Vgs=4.5V Ultra High-Speed Switching Cellular and portable phones Gate Protect Diode Built-in On-board power supplies Driving Voltage : 4.5V N-Channel Power MOSFET Li-ion battery systems DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free PIN CONFIGURATION/ PRODUCT NAME MARKING PRODUCTS PACKAGE ORDER UNIT XP161A11A1PR SOT-89 1,000/Reel (*) G : Gate XP161A11A1PR-G SOT-89 1,000/Reel S : Source (*) The -G suffix denotes Halogen and Antimony free as well as D : Drain being fully RoHS compliant. * x represents production lot number. ABSOLUTE MAXIMUM RATINGS Ta = 25 EQUIVALENT CIRCUIT PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 30 V Gate - Source Voltage Vgss 20 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 Storage Temperature Tstg -55~150 * When implemented on a ceramic PCB 1/5 1 1 1 x XP161A11A1PR-G ELECTRICAL CHARACTERISTICS DC Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Drain Cut-Off Current Idss Vds=30V, Vgs= 0V - - 10 A Gate-Source Leak Current Igss Vgs= 20V, Vds= 0V - - 10 A Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 2.5 V Id= 2A, Vgs= 10V - 0.05 0.065 Drain-Source On-State Resistance*1 Rds(on) Id= 2A, Vgs= 4.5V - 0.075 0.105 Forward Transfer Admittance *1 Yfs Id= 2A, Vds= 10V - 5.5 - S Body Drain Diode Vf If= 4A, Vgs= 0V - 0.85 1.1 V Forward Voltage *1 Effective during pulse test. Dynamic Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Input Capacitance Ciss - 270 - pF Vds= 10V, Vgs=0V Output Capacitance Coss - 150 - pF f= 1MHz Feedback Capacitance Crss - 55 - pF Switching Characteristics Ta = 25 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Vgs= 5V, Id=2A Vdd= 10V Turn-Off Delay Time td (off) - 35 - ns Fall Time tf - 15 - ns Thermal Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS Thermal Resistance Rth (ch-a) Implement on a ceramic PCB - 62.5 - /W (Channel-Ambience) 2/5