STB7NK80Z-1 STMicroelectronics

STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z 2 2 N-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D PAK,I PAK Zener-protected SuperMESH Power MOSFET Features V DSS Type R I DS(on) D ( Tjmax) STP7NK80Z 800V < 1.8 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8 5.2A STB7NK80Z-1 800V < 1.8 5.2A Extremely high dv/dt capability 100% avalanche tested 3 3 2 1 1 Gate charge minimized 2 2 I PAK D PAK Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Applications D(2) Switching application Description The SuperMESH series is obtained through an G(1) extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary S(3) AM01476v1 MDmesh products. Table 1. Device summary Order codes Marking Package Packaging STB7NK80ZT4 B7NK80Z DPAK Tape e reel STB7NK80Z-1 B7NK80Z IPAK STP7NK80Z P7NK80Z TO-220 Tube STP7NK80ZFP P7NK80ZFP TO-220FP March 2010 Doc ID 8979 Rev 6 1/17 www.st.com 17Contents STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17 Doc ID 8979 Rev 6