X-On Electronics has gained recognition as a prominent supplier of STB80NF55-06T4 MOSFET across the USA, India, Europe, Australia, and various other global locations. STB80NF55-06T4 MOSFET are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

STB80NF55-06T4 STMicroelectronics

STB80NF55-06T4 electronic component of STMicroelectronics
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Part No.STB80NF55-06T4
Manufacturer: STMicroelectronics
Category: MOSFET
Description: MOSFET N-Ch 55 Volt 80 Amp
Datasheet: STB80NF55-06T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.7867 ea
Line Total: USD 1786.7

Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 STB80NF55-06T4 More Buying Options & Price Grid(s)

Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 2.2178

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 4.1049

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 7.77
10 : USD 6.7298
100 : USD 5.5134
500 : USD 4.6934

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 7.77
10 : USD 6.7298
100 : USD 5.5134
500 : USD 4.6934

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 2.4705
2000 : USD 2.2875

0
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 8.3014
10 : USD 2.9863

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 1.7887

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1000
Multiples : 1000
1000 : USD 1.7867

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB80NF55-06T4 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB80NF55-06T4 and other electronic components in the MOSFET category and beyond.

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Additional Infomation About Product

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP 2 2 N-channel 55V - 0.005 - 80A - TO-220 /FP - I PAK - D PAK STripFET II Power MOSFET General features Type V R I DSS DS(on) D (1) STB80NF55-06 55V <0.0065 80A 3 3 (1) 2 STB80NF55-06-1 55V <0.0065 80A 2 1 1 (1) STP80NF55-06 55V <0.0065 80A TO-220 TO-220FP (1) STP80NF55-06FP 55V <0.0065 60A 1. Limited by package Exceptional dv/dt capability 3 1 3 2 1 100% avalanche tested DPAK IPAK Application oriented characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STB80NF55-06T4 B80NF55-06 DPAK Tape & reel STB80NF55-06-1 B80NF55-06-1 IPAK Tube STP80NF55-06 P80NF55-06 TO-220 Tube STP80NF55-06FP P80NF55-06FP TO-220FP Tube October 2006 Rev 8 1/17 www.st.com 17Contents STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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