X-On Electronics has gained recognition as a prominent supplier of STB8NM60T4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB8NM60T4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB8NM60T4 STMicroelectronics

STB8NM60T4 electronic component of STMicroelectronics
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Part No.STB8NM60T4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 650 Volt 5 Amp
Datasheet: STB8NM60T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
171: USD 0.6241 ea
Line Total: USD 106.72 
Availability - 960
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 171  Multiples: 1
Pack Size: 1
Availability Price Quantity
11446
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.923
10 : USD 0.9138
25 : USD 0.9047
50 : USD 0.8955
100 : USD 0.8866
250 : USD 0.8778
500 : USD 0.869
1000 : USD 0.8603

9
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0314
10 : USD 1.7917
30 : USD 1.6451
100 : USD 1.4472

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.8512
2000 : USD 1.8327
5000 : USD 1.8083

11446
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 0.9138
25 : USD 0.9047
50 : USD 0.8955
100 : USD 0.8866
250 : USD 0.8778
500 : USD 0.869
1000 : USD 0.8603

960
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 171
Multiples : 1
171 : USD 0.6241
250 : USD 0.5991
500 : USD 0.5775

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
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We are delighted to provide the STB8NM60T4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB8NM60T4 and other electronic components in the MOSFETs category and beyond.

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The STB8NM60T4 is an N-Channel power MOSFET transistor produced by STMicroelectronics. It uses an advanced MOSFET process technology to achieve high levels of performance and very low on-resistance. This transistor has a breakdown voltage rating of 650 volts and a continuous drain current rating of 5 amps. It is available in a TO-220 package and is designed for use in high-efficiency switch-mode power supplies, especially those running from high voltage supplies. In addition, it is suitable for high-side and low-side switching applications, including power distribution systems, solar inverters and motor control systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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