X-On Electronics has gained recognition as a prominent supplier of STB8NM60T4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB8NM60T4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB8NM60T4 STMicroelectronics

Name: STB8NM60T4
Brand: STMicroelectronics
SKU: STB8NM60T4_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STB8NM60T4 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STB8NM60T4
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 650 Volt 5 Amp
Datasheet:	STB8NM60T4 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

83: USD 0.7817 ea
Line Total: USD 64.88

Availability - 10912
Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ: 83 Multiples: 1
Pack Size: 1

STB8NM60T4 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

10912

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 83
Multiples : 1

83 : USD 0.7831
83 : USD 0.7817

9

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 1
Multiples : 1

1 : USD 2.7319
10 : USD 2.0274
30 : USD 1.5783
100 : USD 1.4338

10912

Ship by Tue. 11 Mar to Mon. 17 Mar

MOQ : 83
Multiples : 1

83 : USD 0.7817

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

8 A 8 A

Vds - Drain-Source Breakdown Voltage

600 V 600 V

Rds On - Drain-Source Resistance

900 mOhms 900 mOhms

Transistor Polarity

N - Channel N - Channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

100 W 100 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

D2PAK D2PAK

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

30 V 30 V

Channel Mode

Enhancement Enhancement

Tradename

Mdmesh Mdmesh

Configuration

Single Single

Series

Stb8nm60 Stb8nm60

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

8 A 8 A

Drain-Source Breakdown Voltage

600 V 600 V

Gate-Source Breakdown Voltage

+/- 30 V +/- 30 V

Power Dissipation

100 W 100 W

Rds On

900 Mohms 900 Mohms

Fall Time

10 ns 10 ns

Rise Time

10 ns 10 ns

Factory Pack Quantity :

1000 1000

Typical Turn-Off Delay Time

23 ns 23 ns

Height

4.6 mm 4.6 mm

Length

10.4 mm 10.4 mm

Transistor Type

1 N - Channel 1 N - Channel

Type

Mosfet Mosfet

Width

9.35 mm 9.35 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

14 ns 14 ns

Notes:- Show Stocked Products With Similar Attributes.

STB8NM60T4 Alternative Parts

We are delighted to provide the STB8NM60T4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB8NM60T4 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The STB8NM60T4 is an N-Channel power MOSFET transistor produced by STMicroelectronics. It uses an advanced MOSFET process technology to achieve high levels of performance and very low on-resistance. This transistor has a breakdown voltage rating of 650 volts and a continuous drain current rating of 5 amps. It is available in a TO-220 package and is designed for use in high-efficiency switch-mode power supplies, especially those running from high voltage supplies. In addition, it is suitable for high-side and low-side switching applications, including power distribution systems, solar inverters and motor control systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ST2
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STM
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Availability	Price	Buy Price	Quantity
10912 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 83 Multiples : 1	83 : USD 0.7831 83 : USD 0.7817

9 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 2.7319 10 : USD 2.0274 30 : USD 1.5783 100 : USD 1.4338

10912 Ship by Tue. 11 Mar to Mon. 17 Mar MOQ : 83 Multiples : 1	83 : USD 0.7817

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