X-On Electronics has gained recognition as a prominent supplier of STB80NF55L-08-1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB80NF55L-08-1 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB80NF55L-08-1 STMicroelectronics

STB80NF55L-08-1 electronic component of STMicroelectronics
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Part No.STB80NF55L-08-1
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch, 55V-0.0065ohms 80A
Datasheet: STB80NF55L-08-1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.7194 ea
Line Total: USD 3.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 3.7194
10 : USD 3.2066
100 : USD 2.6277
500 : USD 2.2369
1000 : USD 1.8865
2000 : USD 1.7922

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 7.0163
10 : USD 2.558
25 : USD 2.4441
100 : USD 2.1644
500 : USD 1.8641
1000 : USD 1.6674

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the STB80NF55L-08-1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB80NF55L-08-1 and other electronic components in the MOSFETs category and beyond.

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STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 2 2 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D PAK/I PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL R (on) = 0.0065 DS 2 1 2 D PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 2 I PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature INTERNAL SCHEMATIC DIAGRAM Size strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS HIGH CURRENT SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 55 V DS GS V Drain-gate Voltage (R =20k ) 55 V DGR GS V Gate- source Voltage 16 V GS I (1) Drain Current (continuous) at T = 25C 80 A D C I (1) Drain Current (continuous) at T = 100C 80 A D C I ( ) Drain Current (pulsed) 320 A DM P Total Dissipation at T = 25C TOT C 300 W Derating Factor 2 W/C dv/dt (2) Peak Diode Recovery voltage slope 15 V/ns E (3) Single Pulse Avalanche Energy 870 mJ AS T stg Storage Temperature 55 to 175 C T Max. Operating Junction Temperature 175 C j (1) Current Limited by Package ( ) Pulse width limited by safe operating area (2) I 80A, di/dt 500A/s, V =40V T T SD DD j JMAX. (3) Starting T=25C, I =40A,V =40V j D DD March 2004 1/9STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (T =25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V =0 55 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V =Max Rating 1A DSS DS Drain Current (V =0) GS V = Max Rating, T =125 C 10 A DS C I Gate-body Leakage V = 16V 100 nA GSS GS Current (V =0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I =250A 11.6 2.5 V GS(th) DS GS D R Static Drain-source On V =10 V,I =40A 0.0065 0.008 DS(on) GS D Resistance 0.008 0.01 V =5 V, I =40A GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g Forward Transconductance V =15V I =40 A 150 S fs DS , D C Input Capacitance V = 25V,f= 1MHz,V =0 4350 pF iss DS GS C Output Capacitance 800 pF oss C Reverse Transfer 260 pF rss Capacitance 2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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