STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 2 2 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D PAK/I PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL R (on) = 0.0065 DS 2 1 2 D PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 2 I PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature INTERNAL SCHEMATIC DIAGRAM Size strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS HIGH CURRENT SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 55 V DS GS V Drain-gate Voltage (R =20k ) 55 V DGR GS V Gate- source Voltage 16 V GS I (1) Drain Current (continuous) at T = 25C 80 A D C I (1) Drain Current (continuous) at T = 100C 80 A D C I ( ) Drain Current (pulsed) 320 A DM P Total Dissipation at T = 25C TOT C 300 W Derating Factor 2 W/C dv/dt (2) Peak Diode Recovery voltage slope 15 V/ns E (3) Single Pulse Avalanche Energy 870 mJ AS T stg Storage Temperature 55 to 175 C T Max. Operating Junction Temperature 175 C j (1) Current Limited by Package ( ) Pulse width limited by safe operating area (2) I 80A, di/dt 500A/s, V =40V T T SD DD j JMAX. (3) Starting T=25C, I =40A,V =40V j D DD March 2004 1/9STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (T =25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V =0 55 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V =Max Rating 1A DSS DS Drain Current (V =0) GS V = Max Rating, T =125 C 10 A DS C I Gate-body Leakage V = 16V 100 nA GSS GS Current (V =0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I =250A 11.6 2.5 V GS(th) DS GS D R Static Drain-source On V =10 V,I =40A 0.0065 0.008 DS(on) GS D Resistance 0.008 0.01 V =5 V, I =40A GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g Forward Transconductance V =15V I =40 A 150 S fs DS , D C Input Capacitance V = 25V,f= 1MHz,V =0 4350 pF iss DS GS C Output Capacitance 800 pF oss C Reverse Transfer 260 pF rss Capacitance 2/9