STB80N4F6AG STMicroelectronics

STB80N4F6AG Automotive-grade N-Channel 40 V, 5.5 m typ.,80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB80N4F6AG 40 V 6 m 80 A Designed for automotive applications and 3 AEC-Q101 qualified 1 Very low on-resistance Very low gate charge High avalanche ruggedness 2 D PAK Low gate drive power loss Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all G(1) packages. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packaging STB80N4F6AG 80N4F6 DPAK Tape and Reel November 2015 DocID027978 Rev 2 1/15 www.st.com This is information on a product in full production. Contents STB80N4F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 DPAK package information .............................................................. 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID027978 Rev 2