X-On Electronics has gained recognition as a prominent supplier of STB6N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB6N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB6N60M2 STMicroelectronics

Name: STB6N60M2
Brand: STMicroelectronics
SKU: STB6N60M2_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STB6N60M2 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STB6N60M2
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh II
Datasheet:	STB6N60M2 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

98: USD 0.663 ea
Line Total: USD 64.97

Availability - 45
Ship by Wed. 19 Mar to Tue. 25 Mar

MOQ: 98 Multiples: 1
Pack Size: 1

STB6N60M2 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

45

Ship by Wed. 19 Mar to Tue. 25 Mar

MOQ : 98
Multiples : 1

98 : USD 0.663

24

Ship by Wed. 26 Mar to Mon. 31 Mar

MOQ : 1
Multiples : 1

1 : USD 1.6828
10 : USD 1.6039
30 : USD 1.2008
100 : USD 1.1637
500 : USD 1.1472
1000 : USD 1.1391

1910

Ship by Wed. 19 Mar to Tue. 25 Mar

MOQ : 90
Multiples : 1

90 : USD 0.7202
91 : USD 0.7176
200 : USD 0.7072

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

4.5 A 4.5 A

Vds - Drain-Source Breakdown Voltage

600 V 600 V

Rds On - Drain-Source Resistance

1.06 Ohms 1.06 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs - Gate-Source Breakdown Voltage

25 V 25 V

Vgs th - Gate-Source Threshold Voltage

3 V 3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

60 W 60 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

D2PAK - 2 D2PAK - 2

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

25 V 25 V

Qg - Gate Charge

8 nC 8 nC

Tradename

Mdmesh Mdmesh

Configuration

Single Single

Series

Stb6n60m2 Stb6n60m2

Brand

Stmicroelectronics Stmicroelectronics

Fall Time

22.5 ns 22.5 ns

Rise Time

7.4 ns 7.4 ns

Factory Pack Quantity :

1000 1000

Typical Turn-Off Delay Time

24 ns 24 ns

Transistor Type

1 N - Channel 1 N - Channel

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-On Delay Time

9.5 ns 9.5 ns

Notes:- Show Stocked Products With Similar Attributes.

STB6N60M2 Alternative Parts

We are delighted to provide the STB6N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB6N60M2 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 typ., 4.5 A MDmesh M2 2 Power MOSFETs in D PAK and DPAK packages Datasheet - production data Features V R DS DS(on) Order code I D T max Jmax TAB STB6N60M2 TAB 650 V 1.2 4.5 A STD6N60M2 3 3 1 1 Extremely low gate charge 2 DPAK D PAK Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected Applications Figure 1. Internal schematic diagram Switching applications , TAB Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packing 2 STB6N60M2 D PAK 6N60M2 Tape and reel STD6N60M2 DPAK May 2016 DocID024772 Rev 3 1/21 This is information on a product in full production. www.st.comContents STB6N60M2, STD6N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package information 10 4.1 DPAK(TO-263) package information .11 4.2 DPAK(TO-252) package information 14 5 Packing information 17 6 Revision history . 20 2/21 DocID024772 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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ST2
ST7
STM
STMICRELECTRONICS
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Availability	Price	Buy Price	Quantity
45 Ship by Wed. 19 Mar to Tue. 25 Mar MOQ : 98 Multiples : 1	98 : USD 0.663

24 Ship by Wed. 26 Mar to Mon. 31 Mar MOQ : 1 Multiples : 1	1 : USD 1.6828 10 : USD 1.6039 30 : USD 1.2008 100 : USD 1.1637 500 : USD 1.1472 1000 : USD 1.1391

1910 Ship by Wed. 19 Mar to Tue. 25 Mar MOQ : 90 Multiples : 1	90 : USD 0.7202 91 : USD 0.7176 200 : USD 0.7072

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