STB43N65M5 STMicroelectronics

STB43N65M5 Datasheet Automotive-grade N-channel 650 V, 0.058 typ., 42 A MDmesh M5 Power MOSFET in a DPAK package Features TAB V R max. I P Order code DS DS(on) D TOT STB43N65M5 650 V 0.063 42 A 250 W 2 3 1 AEC-Q101 qualified DPAK Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET based on the MDmesh M5 innovative AM01475v1 noZen vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link STB43N65M5 Product summary Order code STB43N65M5 Marking 43N65M5 Package DPAK Packing Tape and reel DS11173 - Rev 2 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB43N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 42 case I A D Drain current (continuous) at T = 100 C 26.5 case (1) I Drain current (pulsed) 168 A DM P Total power dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 42 A, di/dt=150 A/s V peak < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 7 A AR (2) E Single pulse avalanche energy 650 mJ AS 1. (pulse width limited by T ). jmax 2. starting T = 25 C, I = I , V = 50 V. j D AR DD DS11173 - Rev 2 page 2/16