X-On Electronics has gained recognition as a prominent supplier of STB43N65M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB43N65M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB43N65M5 STMicroelectronics

STB43N65M5 electronic component of STMicroelectronics
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Part No.STB43N65M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmesh M5 Power MOSFET in a D2PAK package
Datasheet: STB43N65M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 5.8916 ea
Line Total: USD 5891.6 
Availability - 2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
66
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 8.5553
10 : USD 7.0512
25 : USD 6.305

708
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 8.4752
10 : USD 7.0143
100 : USD 5.9869
500 : USD 5.934

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 5.8916

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB43N65M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB43N65M5 and other electronic components in the MOSFETs category and beyond.

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STB43N65M5 Datasheet Automotive-grade N-channel 650 V, 0.058 typ., 42 A MDmesh M5 Power MOSFET in a DPAK package Features TAB V R max. I P Order code DS DS(on) D TOT STB43N65M5 650 V 0.063 42 A 250 W 2 3 1 AEC-Q101 qualified DPAK Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET based on the MDmesh M5 innovative AM01475v1 noZen vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link STB43N65M5 Product summary Order code STB43N65M5 Marking 43N65M5 Package DPAK Packing Tape and reel DS11173 - Rev 2 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB43N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 42 case I A D Drain current (continuous) at T = 100 C 26.5 case (1) I Drain current (pulsed) 168 A DM P Total power dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 42 A, di/dt=150 A/s V peak < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 7 A AR (2) E Single pulse avalanche energy 650 mJ AS 1. (pulse width limited by T ). jmax 2. starting T = 25 C, I = I , V = 50 V. j D AR DD DS11173 - Rev 2 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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