STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in DPAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB R DS(on) Order codes V I P DSS D TOT max 3 2 3 1 1 STB2N62K3 TAB 45 W IPAK DPAK STD2N62K3 3 TAB STF2N62K3 620 V < 3.6 2.2 A 20 W 1 DPAK STP2N62K3 45 W STU2N62K3 3 3 2 100% avalanche tested 2 1 1 Extremely high dv/dt capability TO-220FP TO-220 Gate charge minimized Very low intrinsic capacitance Figure 1. Internal schematic diagram Improved diode reverse recovery D(2) characteristics Zener-protected Applications G(1) Switching applications Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, S(3) AM01476v1 combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STB2N62K3 DPAK 2N62K3 Tape and reel STD2N62K3 DPAK STF2N62K3 TO-220FP STP2N62K3 2N62K3 T0-220 Tube STU2N62K3 IPAK March 2012 Doc ID 018898 Rev 2 1/25 This is information on a product in full production. www.st.com 25Contents STB/D/F/P/U2N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 20 6 Revision history . 23 2/25 Doc ID 018898 Rev 2