STB30N80K5 STMicroelectronics

STB30N80K5 N-channel 800 V, 0.15 typ., 24 A, MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STB30N80K5 800 V 0.18 24 A 2 Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested D PAK Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packaging STB30N80K5 30N80K5 DPAK Tape and reel July 2016 DocID028737 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STB30N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 D2PAK package information ........................................................... 10 4.2 D2PAK packaging information ........................................................ 13 5 Revision history ............................................................................ 15 2/16 DocID028737 Rev 2