STB32NM50N STMicroelectronics

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 typ., 22 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 packages Datasheet production data Features TAB R DS(on) Order codes V I P DS D TOT 2 max. 3 1 3 2 STB32NM50N 190 W 1 DPAK TO-220FP STF32NM50N 35 W 500 V 0.13 22 A STP32NM50N 190 W TAB STW32NM50N 190 W 100% avalanche tested 3 3 Low input capacitance and gate charge 2 2 1 1 Low gate input resistance TO-220 TO-247 Applications Switching applications Figure 1. Internal schematic diagram Description 4 OR These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Package Packaging 2 STB32NM50N D PAK Tape and reel STF32NM50N TO-220FP Tube 32NM50N STP32NM50N TO-220 Tube STW32NM50N TO-247 Tube August 2012 Doc ID 023436 Rev 1 1/21 This is information on a product in full production. www.st.com 21Contents STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 023436 Rev 1