STB34NM60ND STMicroelectronics

STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET 2 (with fast diode) in D PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB Order codes V T max. R max. I DS J DS(on) D 3 1 STB34NM60ND 3 2 2 1 D PAK STF34NM60ND TO-220FP 650 V 0.110 29 A STP34NM60ND TAB STW34NM60ND The worlds best R in TO-220 amongst DS(on) 3 2 3 the fast recovery diode devices 1 2 TO-220 1 100% avalanche tested TO-247 Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance Extremely high dv/dt and avalanche capabilities 4 Applications Switching applications Description These devices are N-channel FDmesh V Power MOSFETs produced using STs MDmesh V 3 technology, which is based on an innovative proprietary vertical structure. The resulting - V product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode. Table 1. Device summary Order codes Marking Packages Packaging 2 STB34NM60ND D PAK Tape and reel STF34NM60ND TO-220FP 34NM60ND STP34NM60ND TO-220 Tube STW34NM60ND TO-247 October 2013 DocID18099 Rev 6 1/22 This is information on a product in full production. www.st.comContents STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 DocID18099 Rev 6