STB36N60M6 STMicroelectronics

STB36N60M6 N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STB36N60M6 600 V 99 m 30 A Reduced switching losses Lower R x area vs previous generation DS(on) Low gate input resistance 100% avalanche tested Zener-protected 2 D PAK Applications Switching applications Figure 1: Internal schematic diagram Description The new MDmesh M6 technology incorporates ( ) D 2 TAB the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent ( ) G 1 RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. S ( 3 ) AM15572V1 Table 1: Device summary Order code Marking Package Packing STB36N60M6 36N60M6 DPAK Tape and reel March 2017 DocID027339 Rev 4 1/20 www.st.com This is information on a product in full production. Contents STB36N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 D2PAK type A package information .................................................. 9 4.2 DPAK (TO-263) type B package information ................................. 12 4.3 D2PAK type A packing information ................................................. 15 4.4 DPAK type B packing information .................................................. 17 5 Revision history ............................................................................ 19 2/20 DocID027339 Rev 4