X-On Electronics has gained recognition as a prominent supplier of D3S080N65B-U MOSFETs across the USA, India, Europe, Australia, and various other global locations. D3S080N65B-U MOSFETs are a product manufactured by D3 Engineering. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

D3S080N65B-U D3 Engineering

Name: D3S080N65B-U
Brand: D3 Engineering
SKU: D3S080N65BU_D3 Engineering
Availability: OutOfStock
Rating: 5 (11 reviews)

D3S080N65B-U electronic component of D3 Engineering

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Part No.	D3S080N65B-U
Manufacturer:	D3 Engineering
Category:	MOSFETs
Description:	MOSFET 80 mOhm 650V Superjunction Power MOSFET in TO-220
Datasheet:	D3S080N65B-U Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 2.5949 ea
Line Total: USD 2594.9

Availability - 0

MOQ: 1000 Multiples: 1000
Pack Size: 1000

D3S080N65B-U More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 26 Nov to Thu. 28 Nov MOQ : 1000 Multiples : 1000	1000 : USD 2.5949 2500 : USD 2.4916 5000 : USD 2.4012

We are delighted to provide the D3S080N65B-U from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D3S080N65B-U and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

D3S080N65 650V, 80m, 40.8 Amp Super Junction Power Package Options Ordering Information Part Number Package Option D3S080N65B-U TO-220 D3S080N65D-U TO-247 D3S080N65E-U TO-263 D3S080N65F-U TO-220 Fullpak Device Schematic Description Drain (Pin 2, Tab) TM +FET is an advanced Super Junction Power MOSFET offering excellent efficiency through low Rds-ON and low gate TM charge. +FET is a rugged device with precision charge balance implementation designed for demanding uses such as Gate enterprise power computing power supplies, motor control, (Pin 1) Source lighting and other challenging power conversion applications. (Pin 3) Features Benefits LOW R DS(ON) LOW CONDUCTION LOSSES FAST SWITCHING HIGH EFFICIENCY HIGH E EXCELLENT AVALANCHE PERFORMANCE AS REL TEST SPEC: JESD-22 HTRB >3000 HRS Table 1 Key Parameters Applications Parameter Value Unit POWER FACTOR CORRECTION V T 710 V DSS jmax SERVER POWER SUPPLIES RDS(on) max < 80 m TELECOM POWER SUPPLIES Qg typ 77 nC I 25 C 40.8 A D INVERTERS MOTOR CONTROL Copyright D3 Semiconductor 2016 All Rights Reserved D3S080N65 Contents Contents ....................................................................................................................................................................... 2 Maximum Ratings ........................................................................................................................................................ 3 Thermal Characteristics ............................................................................................................................................... 4 Electrical Characteristics .............................................................................................................................................. 5 Electrical Characteristics Graphs .................................................................................................................................. 7 Revision History.......................................................................................................................................................... 16 Resources ................................................................................................................................................................... 16 Patents, Copyrights and Trademarks ......................................................................................................................... 16 2 Copyright D3 Semiconductor 2016 All Rights Reserved

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer D3 Engineering D3 Engineering
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 38.3 A 38.3 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 70 mOhms 70 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.3 V 2.3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 250 W 250 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Qg - Gate Charge 77 nC 77 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand D3 D3
Fall Time 23 ns 23 ns
Product Type Mosfet Mosfet
Rise Time 24 ns 24 ns
Factory Pack Quantity : 50 50
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 90 ns 90 ns
Typical Turn-On Delay Time 17 ns 17 ns
Cnhts 8541409000 8541409000
Hts Code 8541407080 8541407080
Mxhts 85414001 85414001
Taric 8541409090 8541409090