X-On Electronics has gained recognition as a prominent supplier of STB36NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB36NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB36NM60N STMicroelectronics

Name: STB36NM60N
Brand: STMicroelectronics
SKU: STB36NM60N_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB36NM60N electronic component of STMicroelectronics

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Part No.	STB36NM60N
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
Datasheet:	STB36NM60N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STB36NM60N More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 13.4669 10 : USD 11.719 100 : USD 9.7025 500 : USD 8.4487	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 13.4669 10 : USD 11.719 100 : USD 9.7025 500 : USD 8.4487	N/A Obsolete

0 MOQ : 1000 Multiples : 1000	1000 : USD 7.6312	N/A Obsolete

0 MOQ : 1000 Multiples : 1000	1000 : USD 4.9917	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 8.7276 10 : USD 5.8059	N/A Obsolete

We are delighted to provide the STB36NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB36NM60N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB36NM60N Automotive-grade N-channel 600 V, 0.093 , 29 A, MDmesh II Power MOSFET in a DPAK package Datasheet production data Features V DS R DS(on) Order code I P D TOT TAB max. T Jmax STB36NM60N 650 V 0.105 29 A 210 W Designed for automotive applications and 3 AEC-Q101 qualified 1 100% avalanche tested 2 D PAK Low input capacitance and gate charge Low gate input resistance Applications Figure 1. Internal schematic diagram Switching applications % 7 Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power * MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high 6 efficiency converters. 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STB36NM60N 36NM60N D PAK Tape and reel June 2015 DocID16099 Rev 5 1/15 This is information on a product in full production. www.st.comContents STB36NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 12 6 Revision history . 14 2/15 DocID16099 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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C-Max may also be referenced as

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 29 A 29 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 105 mOhms 105 mOhms
Transistor Polarity n - channel n - channel
Pd - Power Dissipation 210 W 210 W
Mounting Style through hole through hole
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Qg - Gate Charge 83.6 nC 83.6 nC
Qualification aec - q101 aec - q101
Tradename mdmesh mdmesh
Series stb36nm60n stb36nm60n
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 29 A 29 A
Drain-Source Breakdown Voltage 600 V 600 V
Power Dissipation 210 W 210 W
Rds On 105 mohms 105 mohms
Gate Charge Qg 83.6 nC 83.6 nC
Factory Pack Quantity : 1000 1000
Configuration single single
Transistor Type 1 n - channel 1 n - channel
Cnhts 8542319000 8542319000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8542319000 8542319000