STB26NM60N STMicroelectronics

STB26NM60N, STP26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in DPAK and TO-220 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB STB26NM60N TAB 600 V 0.165 20 A STP26NM60N 100% avalanche tested 3 2 Low input capacitance and gate charge D PAK TO-220 2 1 Low gate input resistance Applications Switching applications Figure 1: Internal schematic diagram Description These devices are N-channel Power MOSFETs D(2) developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is G(1) therefore suitable for the most demanding high efficiency converters. S(3) AM01475v1 noTab noZen Table 1: Device summary Order code Marking Package Packaging STB26NM60N DPAK Tape and reel 26NM60N STP26NM60N TO-220 Tube December 2016 DocID15642 Rev 7 1/17 www.st.com This is information on a product in full production. Contents STB26NM60N, STP26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 D2PAK (TO-263) type A package information................................... 9 4.2 D2PAK packaging information ........................................................ 12 4.3 TO-220 type A package information ................................................ 14 5 Revision history ............................................................................ 16 2/17 DocID15642 Rev 7