STB20N65M5 STMicroelectronics

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET 2 2 in D PAK, I PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB V R DS DS(on) Order codes I D 2 T max Jmax 3 3 2 1 1 STB20N65M5 2 2 D PAK I PAK STI20N65M5 710 V 0.19 18 A TAB STP20N65M5 STW20N65M5 Worldwide best R * area DS(on) 3 2 3 1 Higher V rating and high dv/dt capability 2 DSS 1 TO-220 TO-247 Excellent switching performance 100% avalanche tested Figure 1. Internal schematic diagram Applications Switching applications 4 Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The 3 resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially - V suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging 2 STB20N65M5 D PAK Tape and reel 2 STI20N65M5 I PAK 20N65M5 STP20N65M5 TO-220 Tube STW20N65M5 TO-247 February 2013 Doc ID 022865 Rev 2 1/21 This is information on a product in full production. www.st.com 21Contents STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 022865 Rev 2