X-On Electronics has gained recognition as a prominent supplier of STB20N90K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB20N90K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB20N90K5 STMicroelectronics

STB20N90K5 electronic component of STMicroelectronics
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See Product Specifications
Part No.STB20N90K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
Datasheet: STB20N90K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 3.9098 ea
Line Total: USD 3909.8 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 3.9098

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 6.6288
10 : USD 6.3185
25 : USD 5.7171
100 : USD 5.3873
250 : USD 5.3873
500 : USD 5.3873

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 4.484

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 7.9313
10 : USD 6.858
25 : USD 6.48

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 2
Multiples : 1
2 : USD 8.8249

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 2
Multiples : 1
2 : USD 6.6288
10 : USD 6.3185
25 : USD 5.7171
100 : USD 5.3873

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STB20N90K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB20N90K5 and other electronic components in the MOSFETs category and beyond.

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STB20N90K5 Datasheet N-channel 900 V, 0.21 typ., 20 A MDmesh K5 Power MOSFET in a DPAK package Features TAB V R max. I Order code DS DS(on ) D STB20N90K5 900 V 0.25 20 A 2 3 Industrys lowest R x area DS(on) 1 Industrys best FoM (figure of merit) Ultra-low gate charge DPAK 100% avalanche tested Zener-protected D(2, TAB) Applications G(1) Switching applications Description S(3) AM01475V1 This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB20N90K5 Product summary Order code STB20N90K5 Marking 20N90K5 Package DPAK Packing Tape and reel DS11568 - Rev 4 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB20N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 20 A D C I Drain current (continuous) at T = 100 C 13 A D C (1) I Drain current (pulsed) 80 A D P Total dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 20 A, di/dt 100 A/s V peak V , V = 450 V. SD DS (BR)DSS DD 3. V 720 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 6.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 500 mJ AS j D AR DD DS11568 - Rev 4 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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