STB18NF25, STD18NF25 Datasheet Automotive-grade N-channel 250 V, 0.140 typ., 17 A STripFET II 2 Power MOSFETs in D PAK and DPAK packages Features TAB TAB Order codes V R max. I P DS DS(on) D TOT 3 STB18NF25 2 2 250 V 0.165 17 A 110 W 1 3 STD18NF25 1 2 D PAK DPAK AEC-Q101 qualified Exceptional dv/dt capability D(2, TAB) 100% avalanche tested Low gate charge G(1) Applications Switching applications S(3) AM01475v1 noZen Description These Power MOSFETs have been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status STB18NF25 STD18NF25 DS6601 - Rev 5 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB18NF25, STD18NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 250 V DS V Gate-source voltage 20 V GS I Drain current (continuous) at T = 25 C 17 A D C I Drain current (continuous) at T = 100 C 12 A D C (1) I Drain current (pulsed) 68 A DM P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 10 V/ns T Operating junction temperature range j -55 to 175 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 17 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK D PAK R Thermal resistance junction-case 1.36 C/W thj-case (1) R Thermal resistance junction-pcb 30 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 17 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 170 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6601 - Rev 5 page 2/22