STB155N3H6 STMicroelectronics

STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m , 80 A, DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D (1) STB155N3H6 30 V < 3 m 80 A (1) STD155N3H6 30 V < 3 m 80 A 1. Limited by wire bonding 3 3 1 1 R * Q industry benchmark DS(on) g DPAK DPAK Extremely low on-resistance R DS(on) High avalanche ruggedness Application Switching applications Automotive Figure 1. Internal schematic diagram Description D (TAB or 2) These devices are 30 V N-channel Power MOSFETs realized using ST s proprietary STripFET VI technology. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STB155N3H6 DPAK 155N3H6 Tape and reel STD155N3H6 DPAK May 2011 Doc ID 018793 Rev 2 1/ www.st.com 18 Contents STB155N3H6, STD155N3H6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/ Doc ID 018793 Rev 2