STB155N3LH6 STMicroelectronics

STB155N3LH6 STD155N3LH6 N-channel 30 V, 2.4 m , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET Features R DS(on) (1) Order codes V I P DSS D TOT max TAB STB155N3LH6 30 V 3.0 m 80 A 110 W TAB STD155N3LH6 1. Current limited by package 3 3 1 1 100% avalanche tested DPAK Logic level drive DPAK Applications Switching applications Automotive Figure 1. Internal schematic diagram Description OR 4 These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging 2 STB155N3LH6 D PAK 155N3LH6 Tape and reel STD155N3LH6 DPAK September 2011 Doc ID 17893 Rev 3 1/18 www.st.com 18 Contents STB155N3LH6, STD155N3LH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 14 6 Revision history . 17 2/18 Doc ID 17893 Rev 3