STB34NM60N STMicroelectronics

STB34NM60N, STP34NM60N N-channel 600 V, 0.092 , 31.5 A MDmesh II Power MOSFETs in DPAK and TO-220 packages Datasheet - production data Features Order codes V R I P DSS DS(on) D TOT TAB STB34NM60N TAB 600 V 0.105 31.5 A 250 W STP34NM60N 2 100% avalanche tested 3 3 1 2 Low input capacitance and gate charge 1 2 D PAK Low gate input resistance TO-220 Applications Switching applications Figure 1. Internal schematic diagram Description % 7 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order codes Marking Packages Packaging 2 STB34NM60N D PAK Tape and reel 34NM60N STP34NM60N TO-220 Tube March 2015 DocID17740 Rev 9 1/17 This is information on a product in full production. www.st.com 17Contents STB34NM60N, STP34NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 2 4.1 D PAK package information 9 4.2 TO-220 package information 12 5 Packing information 14 6 Revision history . 16 2/17 DocID17740 Rev 9