STB42N65M5, STF42N65M5, STI42N65M5 STP42N65M5, STW42N65M5 Datasheet N-channel 650 V, 70 m typ., 33 A, MDmesh M5 Power MOSFETs in DPAK, TO-220FP, IPAK, TO-220 and TO-247 packages Features TAB V T R max. I Order codes Package DS Jmax DS(on) D 3 3 1 2 STB42N65M5 DPAK 2 1 D PAK TO-220FP STF42N65M5 TO-220FP TAB STI42N65M5 710 V 79 m 33 A IPAK STP42N65M5 TO-220 3 2 2 1 I PAK STW42N65M5 TO-247 TAB Extremely low R DS(on) Low gate charge and input capacitance 3 3 2 Excellent switching performance 2 1 1 TO-220 TO-247 100% avalanche tested D(2, TAB) Applications Switching applications G(1) Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal S(3) layout. The resulting products offer extremely low on-resistance, making them AM01475v1 noZen particularly suitable for applications requiring high power and superior efficiency. Product status STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 DS6033 - Rev 4 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK, TO-220FP TO-220, TO-247 V Gate-source voltage 25 V GS (1) Drain current (continuous) at T = 25 C 33 33 A C I D (1) Drain current (continuous) at T = 100 C 20.8 20.8 A C (2) I Drain current (pulsed) 132 132 A DM P Total power dissipation at T = 25 C 190 40 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 33 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220 TO-247 TO-220FP Thermal resistance R 0.66 3.1 C/W thj-case junction-case Thermal resistance R thj-amb 62.5 50 62.5 C/W junction-ambient Thermal resistance (1) R 30 C/W thj-pcb junction-pcb 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 11 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 950 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6033 - Rev 4 page 2/25