X-On Electronics has gained recognition as a prominent supplier of STB45N40DM2AG MOSFETs across the USA, India, Europe, Australia, and various other global locations. STB45N40DM2AG MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STB45N40DM2AG STMicroelectronics

STB45N40DM2AG electronic component of STMicroelectronics
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Part No.STB45N40DM2AG
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STB45N40DM2AG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 4.5006 ea
Line Total: USD 4500.6 
Availability - 970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 4.5006
2000 : USD 4.3979

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
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Brand
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Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the STB45N40DM2AG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STB45N40DM2AG and other electronic components in the MOSFETs category and beyond.

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STB45N40DM2AG Datasheet Automotive-grade N-channel 400 V, 0.063 typ., 38 A, MDmesh DM2 2 Power MOSFET in a D PAK package Features TAB V R max. I P Order code DS DS(on) D TOT STB45N40DM2AG 400 V 0.072 38 A 250 W 2 3 1 AEC-Q101 qualified Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STB45N40DM2AG Product summary Order code STB45N40DM2AG Marking 45N40DM2 2 Package D PAK Packing Tape and reel DS11238 - Rev 4 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB45N40DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 38 case I A D Drain current (continuous) at T = 100 C 24 case (1) I Drain current (pulsed) 110 A DM P Total power dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 38 A, di/dt = 800 A/s, V peak < V ,V = 80% V SD DS (BR)DSS DD (BR)DSS 3. V 320 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 7 A AR (2) E Single pulse avalanche energy 1100 mJ AS 1. Pulse width is limited by T . jmax 2. starting T = 25 C, I = I , V = 50 V j D AR DD DS11238 - Rev 4 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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