STB45N40DM2AG STMicroelectronics

STB45N40DM2AG Datasheet Automotive-grade N-channel 400 V, 0.063 typ., 38 A, MDmesh DM2 2 Power MOSFET in a D PAK package Features TAB V R max. I P Order code DS DS(on) D TOT STB45N40DM2AG 400 V 0.072 38 A 250 W 2 3 1 AEC-Q101 qualified Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STB45N40DM2AG Product summary Order code STB45N40DM2AG Marking 45N40DM2 2 Package D PAK Packing Tape and reel DS11238 - Rev 4 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB45N40DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 38 case I A D Drain current (continuous) at T = 100 C 24 case (1) I Drain current (pulsed) 110 A DM P Total power dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 38 A, di/dt = 800 A/s, V peak < V ,V = 80% V SD DS (BR)DSS DD (BR)DSS 3. V 320 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 7 A AR (2) E Single pulse avalanche energy 1100 mJ AS 1. Pulse width is limited by T . jmax 2. starting T = 25 C, I = I , V = 50 V j D AR DD DS11238 - Rev 4 page 2/15