STD105N10F7AG STMicroelectronics

STD105N10F7AG Automotive-grade N-channel 100 V, 6.8 m typ., 80 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. DS DS(on) ID PTOT STD105N10F7AG 100 V 8 m 80 A 120 W Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss Figure 1: Internal schematic diagram High avalanche ruggedness Applications D(2, TAB) Switching applications Description This N-channel Power MOSFET utilizes G(1) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more S(3) efficient switching. AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD105N10F7AG 105N10F7 DPAK Tape and reel June 2016 DocID027071 Rev 4 1/14 www.st.com This is information on a product in full production. Contents STD105N10F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 5 Revision history ............................................................................ 13 2/14 DocID027071 Rev 4