X-On Electronics has gained recognition as a prominent supplier of STD10NM65N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD10NM65N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD10NM65N STMicroelectronics

STD10NM65N electronic component of STMicroelectronics
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See Product Specifications
Part No.STD10NM65N
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Channel 650V Power MDmesh
Datasheet: STD10NM65N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.5989
10 : USD 2.3576
100 : USD 1.9217
500 : USD 1.5251
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.9812
10 : USD 1.6926
100 : USD 1.3494
500 : USD 1.1856
N/A

Obsolete
0
MOQ : 2500
Multiples : 1
2500 : USD 2.191
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.8042
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5873
10 : USD 1.3513
100 : USD 1.0796
500 : USD 0.9438
1000 : USD 0.9334
2500 : USD 0.8824
5000 : USD 0.8487
10000 : USD 0.8162
25000 : USD 0.7838
N/A

Obsolete
0
MOQ : 19
Multiples : 1
19 : USD 2.2723
25 : USD 2.2383
100 : USD 2.2044
250 : USD 2.1692
500 : USD 2.1353
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD10NM65N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD10NM65N and other electronic components in the MOSFETs category and beyond.

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STD10NM65N Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh II Power MOSFET in a DPAK package Features V DS TAB Order code R max. I DS(on) D T jmax. 3 2 1 STD10NM65N 710 V 0.48 9 A DPAK 100% avalanche tested Low input capacitance and gate charge D(2, TAB) Low gate input resistance Applications G(1) Switching applications S(3) AM01475v1 noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD10NM65N Product summary Order code STD10NM65N Marking 10NM65N Package DPAK Packing Tape and reel DS5566 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD10NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 5.7 A D C (1) I Drain current (pulsed) 36 A DM P Total dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns dv/dt Drain-source voltage slope (V = 520 V, I = 9 A, V = 10 V) 25 DD D GS T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 9 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AS j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AS DD DS5566 - Rev 4 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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