STD10NM65N Datasheet N-channel 650 V, 0.43 typ., 9 A MDmesh II Power MOSFET in a DPAK package Features V DS TAB Order code R max. I DS(on) D T jmax. 3 2 1 STD10NM65N 710 V 0.48 9 A DPAK 100% avalanche tested Low input capacitance and gate charge D(2, TAB) Low gate input resistance Applications G(1) Switching applications S(3) AM01475v1 noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Product status STD10NM65N Product summary Order code STD10NM65N Marking 10NM65N Package DPAK Packing Tape and reel DS5566 - Rev 4 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD10NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 5.7 A D C (1) I Drain current (pulsed) 36 A DM P Total dissipation at T = 25 C 90 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns dv/dt Drain-source voltage slope (V = 520 V, I = 9 A, V = 10 V) 25 DD D GS T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 9 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 2.5 A AS j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 200 mJ AS j D AS DD DS5566 - Rev 4 page 2/18