STD11N60DM2 STMicroelectronics

STD11N60DM2 Datasheet N-channel 600 V, 370 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package Order code V T R max. I P DS Jmax DS(on) D TOT TAB STD11N60DM2 650 V 420 m 10 A 110 W Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zener-protected Applications Switching applications G(1) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr NG1D2TS3Z with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD11N60DM2 Product summary Order code STD11N60DM2 Marking 11N60DM2 Package DPAK Packing Tape and reel DS11674 - Rev 2 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD11N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 10 case I A D Drain current (continuous) at T = 100 C 6.3 case (1) I Drain current (pulsed) 40 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 10 A, di/dt=900 A/s V peak < V ,V = 400 V SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1 inch FR-4 board, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 2.5 A AR (2) E Single pulse avalanche energy 250 mJ AS 1. pulse width limited by T jmax 2. starting T = 25 C, I = I , V = 50 V. j D AR DD DS11674 - Rev 2 page 2/16