X-On Electronics has gained recognition as a prominent supplier of STD11NM50N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD11NM50N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD11NM50N STMicroelectronics

Name: STD11NM50N
Brand: STMicroelectronics
SKU: STD11NM50N_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STD11NM50N electronic component of STMicroelectronics

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See Product Specifications

Part No.	STD11NM50N
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET POWER MOSFET N-CH 500V
Datasheet:	STD11NM50N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2500: USD 0.8951 ea
Line Total: USD 2237.75

Availability - 2425
Ship by Tue. 18 Mar to Mon. 24 Mar

MOQ: 2500 Multiples: 2500
Pack Size: 2500

STD11NM50N More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

31

Ship by Tue. 18 Mar to Mon. 24 Mar

MOQ : 56
Multiples : 1

56 : USD 1.161

2425

Ship by Tue. 18 Mar to Mon. 24 Mar

MOQ : 2500
Multiples : 2500

2500 : USD 0.8951
10000 : USD 0.8846

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

8.5 A 8.5 A

Vds - Drain-Source Breakdown Voltage

500 V 500 V

Rds On - Drain-Source Resistance

470 mOhms 470 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

3 V 3 V

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

70 W 70 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

DPAK DPAK

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

25 V 25 V

Qg - Gate Charge

19 nC 19 nC

Tradename

Mdmesh Mdmesh

Configuration

Single Single

Series

Std11nm50n Std11nm50n

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

8.5 A 8.5 A

Drain-Source Breakdown Voltage

500 V 500 V

Power Dissipation

70 W 70 W

Rds On

470 Mohms 470 Mohms

Fall Time

10 ns 10 ns

Gate Charge Qg

19 nC 19 nC

Rise Time

10 ns 10 ns

Factory Pack Quantity :

2500 2500

Typical Turn-Off Delay Time

33 ns 33 ns

Transistor Type

1 N - Channel 1 N - Channel

Type

Power Mosfet Power Mosfet

Cnhts

8541210000 8541210000

Hts Code

8541290075 8541290075

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

8 ns 8 ns

Notes:- Show Stocked Products With Similar Attributes.

STD11NM50N Alternative Parts

We are delighted to provide the STD11NM50N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD11NM50N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STD11NM50N N-channel 500 V, 0.40 typ., 8.5 A MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code V T max R max I DS J DS(on) D % STD11NM50N 550 V 0.47 8.5 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 . Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the * companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 6& Table 1. Device summary Order code Marking Package Packaging STD11NM50N 11NM50N DPAK Tape and reel November 2015 DocID028674 Rev 1 1/15 This is information on a product in full production. www.st.com 7 Contents STD11NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 DPAK type A package information . 9 4.2 DPAK type E package information .11 5 Revision history . 14 2/15 DocID028674 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
31 Ship by Tue. 18 Mar to Mon. 24 Mar MOQ : 56 Multiples : 1	56 : USD 1.161

2425 Ship by Tue. 18 Mar to Mon. 24 Mar MOQ : 2500 Multiples : 2500	2500 : USD 0.8951 10000 : USD 0.8846

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