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X-On Electronics has gained recognition as a prominent supplier of STD11N60M2-EP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD11N60M2-EP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD11N60M2-EP STMicroelectronics

STD11N60M2-EP electronic component of STMicroelectronics
STD11N60M2-EP STMicroelectronics
STD11N60M2-EP MOSFETs
STD11N60M2-EP  Semiconductors

Images are for reference only
See Product Specifications
Part No. STD11N60M2-EP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package
Datasheet: STD11N60M2-EP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.089
10 : USD 0.8835
25 : USD 0.7495
50 : USD 0.7225
100 : USD 0.6956
250 : USD 0.6686
500 : USD 0.6684
1000 : USD 0.6415
3000 : USD 0.6412
6000 : USD 0.6411
15000 : USD 0.6409
30000 : USD 0.6406
75000 : USD 0.6405
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.5408
5000 : USD 0.5408
7500 : USD 0.5408
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.3341
10 : USD 1.1803
100 : USD 0.8524
500 : USD 0.722
1000 : USD 0.5806
5000 : USD 0.5275
10000 : USD 0.5034
25000 : USD 0.4873
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD11N60M2-EP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD11N60M2-EP and other electronic components in the MOSFETs category and beyond.

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STD11N60M2-EP Datasheet N-channel 600 V, 0.550 typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD11N60M2-EP 600 V 0.595 7.5 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 Very low turn-off switching losses 100% avalanche tested DPAK Zener-protected D(2, TAB) Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM01475V1 improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STD11N60M2-EP Product summary Order code STD11N60M2-EP Marking 11N60M2EP Package DPAK Packing Tape and Reel DS10957 - Rev 3 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD11N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 7.5 A D C I Drain current (continuous) at T = 100 C 4.7 A D C (1) I Drain current (pulsed) 30 A DM P Total dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 7.5 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.47 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetetive or not repetitive I 2.4 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 115 mJ AS (starting T = 25 C, I = I V = 50 V) j D AR DD DS10957 - Rev 3 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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