STD12N50M2 Datasheet N-channel 500 V, 0.325 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Order code V R max. I DS DS(on) D TAB STD12N50M2 500 V 0.38 10 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 100% avalanche tested Zener-protected DPAK Applications ( ) D 2, TAB Switching applications Description ( 1 ) G This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. ( ) AM15572V1 S 3 Product status STD12N50M2 Product summary Order code STD12N50M2 Marking 12N50M2 Package DPAK Packing Tape and reel DS10237 - Rev 5 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD12N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 10 A D C I Drain current (continuous) at T = 100 C 7 A D C (1) I Drain current (pulsed) 40 A DM P Total dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 10 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD 3. V 400 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.47 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 3.5 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 204 mJ AS j D AR DD DS10237 - Rev 5 page 2/18