STD12N60M2 Datasheet N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a DPAK package Features V R max. I Order code TAB DS DS(on) D STD12N60M2 600 V 0.450 9 A 3 2 1 Extremely low gate charge DPAK Excellent output capacitance (C ) profile OSS 100% avalanche tested D(2, TAB) Zener-protected Applications G(1) Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) AM15572v1 tab technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STD12N60M2 Product summary Order code STD12N60M2 Marking 12N60M2 Package DPAK Packing Tape and reel DS10854 - Rev 2 - April 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD12N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 5.7 A D C (1) I Drain current (pulsed) 36 A DM P Total power dissipation at T = 25 C 85 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 9 A, di/dt 400 A/s V < V , V = 400 V SD DS peak (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.47 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.6 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 117 mJ AS j D AR DD DS10854 - Rev 2 page 2/19