STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 typ., 4 A SuperMESH Power MOSFETs 2 2 in I PAK, D PAK, IPAK and DPAK packages Features TAB TAB Order codes V R max. P I DS DS(on) TOT D 3 1 3 2 2 STB4NK60Z-1 2 1 D PAK I PAK STB4NK60ZT4 600 V 2 70 W 4 A TAB TAB STD4NK60Z-1 3 2 3 1 2 STD4NK60ZT4 1 DPAK IPAK Extremely high dv/dt capability 100% avalanche tested D(2, TAB) Gate charge minimized Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 STD4NK60ZT4 DS2818 - Rev 9 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB4NK60Z-1, STB4NK60ZT4, STD4NK60Z-1, STD4NK60ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 4 A D C I Drain current (continuous) at T = 100 C 2.5 A D C (1) I Drain current (pulsed) 16 A DM P Total dissipation at T = 25 C 70 W TOT C ESD Gate-source human body model (C=100 pF, R=1.5 k) 3 kV (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 4 A, di/dt 200 A/s, V V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit 2 2 IPAK, DPAK I PAK, D PAK R Thermal resistance junction- case 1.79 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T max) 4 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 120 mJ AS j D AR DD DS2818 - Rev 9 page 2/32