STD70N2LH5 STMicroelectronics

STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 , 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type V R max I DSS DS(on) D STD70N2LH5 25 V 0.0071 48 A STU70N2LH5 25 V 0.0075 48 A 3 3 2 R * Q industry benchmark 1 DS(on) g 1 Extremely low on-resistance R DS(on) DPAK IPAK Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description th This product utilizes the 5 generation of design rules of STs proprietary STripFET technology. The lowest available R *Q , in the standard DS(on) g packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking Package Packaging STD70N2LH5 70N2LH5 DPAK Tape & reel STU70N2LH5 70N2LH5 IPAK Tube September 2008 Rev 2 1/12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 12 change without notice. Obsolete Product(s) - Obsolete Product(s)Electrical ratings STD70N2LH5 - STU70N2LH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V =0) 25 V DS GS V Gate-Source voltage 22 V GS (1) Drain current (continuous) at T = 25 C 48 A I C D I Drain current (continuous) at T = 100 C 43 A D C (2) I Drain current (pulsed) 192 A DM P Total dissipation at T = 25 C 60 W TOT C Derating factor 0.4 W/C (3) E Single pulse avalanche energy TBD mJ AS T Operating junction temperature j -55 to 175 C T Storage temperature stg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25 C, I = 24 A, V = 12 V D DD Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 C/W Rthj-amb Thermal resistance junction-case max 100 C/W T Maximum lead temperature for soldering purpose 275 C j 2/12 Obsolete Product(s) - Obsolete Product(s)