STD9N40M2 STMicroelectronics

STD9N40M2 Datasheet N-channel 400 V, 0.59 typ., 6 A MDmesh M2 Power MOSFET in a DPAK package Features Order code V T R max. I DS Jmax DS(on) D TAB STD9N40M2 450 V 0.8 6 A 3 2 1 Extremely low gate charge DPAK Excellent output capacitance (C ) profile OSS 100% avalanche tested ( D 2, TAB) Zener-protected Applications ( 1 ) G Switching applications Description ( ) This device is an N-channel Power MOSFET developed using MDmesh M2 S 3 AM15572V1 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STD9N40M2 Product summary Order code STD9N40M2 Marking 9N40M2 Package DPAK Packing Tape and reel DS10114 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9N40M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 400 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 6 A D C I Drain current (continuous) at T = 100 C 3.8 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 60 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 6 A, di/dt 400 A/s V < V , V = 320 V. SD DS peak (BR)DSS DD 3. V 320 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 148 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10114 - Rev 3 page 2/18