X-On Electronics has gained recognition as a prominent supplier of STD9N40M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD9N40M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD9N40M2 STMicroelectronics

STD9N40M2 electronic component of STMicroelectronics
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Part No.STD9N40M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STD9N40M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
21: USD 0.3147 ea
Line Total: USD 6.61 
Availability - 0
MOQ: 21  Multiples: 21
Pack Size: 21
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4888

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.6215
5000 : USD 0.5755
7500 : USD 0.5755
10000 : USD 0.5755

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5114
10 : USD 0.9374
100 : USD 0.6762
500 : USD 0.5955
1000 : USD 0.4826
2500 : USD 0.4505
5000 : USD 0.4422
10000 : USD 0.438

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 21
Multiples : 1
21 : USD 0.4113
25 : USD 0.387

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 21
Multiples : 21
21 : USD 0.3147
25 : USD 0.296

   
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We are delighted to provide the STD9N40M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD9N40M2 and other electronic components in the MOSFETs category and beyond.

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STD9N40M2 Datasheet N-channel 400 V, 0.59 typ., 6 A MDmesh M2 Power MOSFET in a DPAK package Features Order code V T R max. I DS Jmax DS(on) D TAB STD9N40M2 450 V 0.8 6 A 3 2 1 Extremely low gate charge DPAK Excellent output capacitance (C ) profile OSS 100% avalanche tested ( D 2, TAB) Zener-protected Applications ( 1 ) G Switching applications Description ( ) This device is an N-channel Power MOSFET developed using MDmesh M2 S 3 AM15572V1 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STD9N40M2 Product summary Order code STD9N40M2 Marking 9N40M2 Package DPAK Packing Tape and reel DS10114 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD9N40M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 400 V DS V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 6 A D C I Drain current (continuous) at T = 100 C 3.8 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 60 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 6 A, di/dt 400 A/s V < V , V = 320 V. SD DS peak (BR)DSS DD 3. V 320 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 148 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10114 - Rev 3 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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