STD9NM50N STMicroelectronics

STD9NM50N N-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFET in DPAK Features Order code V T R max. I DSS JMAX DS(on) D STD9NM50N 550 V < 0.79 5 A 100% avalanche tested 3 1 Low input capacitances and gate charge Low gate input resistance DPAK Applications Switching applications Automotive Description Figure 1. Internal schematic diagram These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process with the company s PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. 3 - V Table 1. Device summary Order code Marking Packages Packaging STD9NM50N 9NM50N DPAK Tape and reel September 2011 Doc ID 022254 Rev 1 1/15 www.st.com 15 Contents STD9NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 14 2/15 Doc ID 022254 Rev 1