STD16NF25, STF16NF25 Datasheet N-channel 250 V, 0.195 typ., 14 A STripFET II Power MOSFETs in DPAK and TO-220FP packages Features V R max. I Order code Package DS DS(on) D STD16NF25 DPAK 250 V 0.235 14 A STF16NF25 TO-220FP Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, TAB) Applications Switching applications G(1) Description These Power MOSFETs have been developed using STMicroelectronics unique S(3) STripFET process, which is specifically designed to minimize input capacitance and AM01475v1 noZen gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD16NF25 STF16NF25 DS5532 - Rev 5 - January 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD16NF25, STF16NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP V Drain-source voltage 250 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 14 14 A D C (1) I Drain current (continuous) at T = 100 C 8.8 8.8 A D C (2) (1) I Drain current (pulsed) 56 56 A DM P Total power dissipation at T = 25 C 85 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three leads to external V 2.5 kV ISO heat sink (t = 1 s T = 25C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 13 A, di/dt 300 A/s, V = 80% V , T T . SD DD (BR)DSS j JMAX Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP R Thermal resistance junction-case 1.47 5 thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 thj-amb 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 13 A AR (2) E Single pulse avalanche energy 100 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25C, I = I , V = 50 V. j D AR DD DS5532 - Rev 5 page 2/22