STF18N55M5 STMicroelectronics

STD18N55M5, STP18N55M5 Datasheet N-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages Features V DS TAB Order code R max. Package DS(on) TAB T jmax. 2 3 STD18N55M5 DPAK 1 600 V 0.192 3 2 STP18N55M5 TO-220 DPAK TO-220 1 Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications G(1) Description S(3) These devices are N-channel Power MOSFETs based on the MDmesh M5 AM01475v1 noZen innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STD18N55M5 STP18N55M5 DS6705 - Rev 4 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD18N55M5, STP18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 16 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 64 A DM P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 16 A, di/dt 400 A/s V < V , V = 340 V. SD DS peak (BR)DSS DD Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 210 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6705 - Rev 4 page 2/23