X-On Electronics has gained recognition as a prominent supplier of STF18N55M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF18N55M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF18N55M5 STMicroelectronics

STF18N55M5 electronic component of STMicroelectronics
STF18N55M5 STMicroelectronics
STF18N55M5 MOSFETs
STF18N55M5  Semiconductors

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See Product Specifications
Part No. STF18N55M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 550 V 16A (Tc) 25W (Tc) Through Hole TO-220FP
Datasheet: STF18N55M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.0788 ea
Line Total: USD 4.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 1
Multiples : 1
1 : USD 4.0788
10 : USD 3.2859
100 : USD 2.6582

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
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We are delighted to provide the STF18N55M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF18N55M5 and other electronic components in the MOSFETs category and beyond.

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STD18N55M5, STP18N55M5 Datasheet N-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages Features V DS TAB Order code R max. Package DS(on) TAB T jmax. 2 3 STD18N55M5 DPAK 1 600 V 0.192 3 2 STP18N55M5 TO-220 DPAK TO-220 1 Extremely low R DS(on) Low gate charge and input capacitance Excellent switching performance D(2, TAB) 100% avalanche tested Applications Switching applications G(1) Description S(3) These devices are N-channel Power MOSFETs based on the MDmesh M5 AM01475v1 noZen innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STD18N55M5 STP18N55M5 DS6705 - Rev 4 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD18N55M5, STP18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 16 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 64 A DM P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 16 A, di/dt 400 A/s V < V , V = 340 V. SD DS peak (BR)DSS DD Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2oz Cu board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 4 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 210 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6705 - Rev 4 page 2/23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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