STF18N65M5 STMicroelectronics

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages Datasheet production data Features TAB V R DSS DS(on) Order code I D T max Jmax 3 2 1 3 STF18N65M5 2 1 TO-220FP STI18N65M5 IPAK 710 V < 0.22 15 A STP18N65M5 TAB STW18N65M5 Worldwide best R * area DS(on) 3 3 2 Higher V rating and high dv/dt capability 2 DSS 1 1 TO-247 Excellent switching performance TO-220 100% avalanche tested Figure 1. Internal schematic diagram Applications Switching applications 4 Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The 3 resulting product has extremely low on- resistance, which is unmatched among silicon- - V based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STF18N65M5 TO-220FP STI18N65M5 IPAK 18N65M5 Tube STP18N65M5 TO-220 STW18N65M5 TO-247 July 2012 Doc ID 022879 Rev 3 1/19 This is information on a product in full production. www.st.com 19Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 18 2/19 Doc ID 022879 Rev 3