STF18N60DM2 STMicroelectronics

STF18N60DM2 Datasheet N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package Features V R max. I Order code DS DS(on) D STF18N60DM2 600 V 0.295 12 A Fast-recovery body diode Extremely low gate charge and input capacitance 3 2 1 Low on-resistance 100% avalanche tested TO-220FP Extremely high dv/dt ruggedness D(2) Zener-protected Applications G(1) Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) AM15572v1 no tab recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STF18N60DM2 Product summary Order code STF18N60DM2 Marking 18N60DM2 Package TO-220FP Packing Tube DS10966 - Rev 5 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF18N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D case I Drain current (continuous) at T = 100 C 7.6 A D case (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 25 W TOT case (2) dv/dt Peak diode recovery voltage slope 40 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s T = 25 C) C T Storage temperature range C stg 55 to 150 T Operating junction temperature range C j 1. Pulse width is limited by safe operating area. 2. I 12, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 380 mJ AR (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10966 - Rev 5 page 2/12