X-On Electronics has gained recognition as a prominent supplier of STF23NM60ND MOSFETs across the USA, India, Europe, Australia, and various other global locations. STF23NM60ND MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STF23NM60ND STMicroelectronics

STF23NM60ND electronic component of STMicroelectronics
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Part No.STF23NM60ND
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch, 600V-0.15ohms FDMesh 20A
Datasheet: STF23NM60ND Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
950: USD 2.6345 ea
Line Total: USD 2502.78 
Availability - 0
MOQ: 950  Multiples: 950
Pack Size: 950
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 9.4409
10 : USD 6.1826
25 : USD 5.8409
100 : USD 5.0642
500 : USD 4.3082
1000 : USD 3.7697

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 950
Multiples : 950
950 : USD 2.6345

   
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Pd - Power Dissipation
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We are delighted to provide the STF23NM60ND from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STF23NM60ND and other electronic components in the MOSFETs category and beyond.

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STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND N-channel 600 V, 0.150 typ., 19.5 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB V R DSS DS(on) Order codes I 3 D T max 3 1 Jmax 2 1 STB23NM60ND DPAK TO-220FP STF23NM60ND TAB 650 V < 0.180 19.5 A STP23NM60ND STW23NM60ND 3 3 2 2 1 1 The worldwide best R * area amongst the DS(on) TO-247 fast recovery diode devices TO-220 100% avalanche tested Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance 4 High dv/dt and avalanche capabilities Applications Switching applications Description These FDmesh II Power MOSFETs with 3 - V intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Oreder codes Marking Package Packaging STB23NM60ND 23NM60ND DPAK Tape and reel STF23NM60ND 23NM60ND TO-220FP STP23NM60ND 23NM60ND TO-220 Tube STW23NM60ND 23NM60ND TO-247 December 2012 Doc ID 14367 Rev 4 1/22 This is information on a product in full production. www.st.com 22Contents STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 14367 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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