STF10P6F6 STMicroelectronics

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB Order codes V R max I DS DS(on) D 3 STD10P6F6 1 3 STF10P6F6 2 DPAK -60 V 0.16 -10 A 1 STP10P6F6 TO-220FP STU10P6F6 TAB TAB Very low on-resistance 3 Very low gate charge 2 3 1 2 1 High avalanche ruggedness IPAK TO-220 Low gate drive power loss Figure 1. Internal schematic diagram Applications , TAB Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low R in all DS(on) packages. AM11258v1 Table 1. Device summary Order codes Marking Package Packing STD10P6F6 DPAK Tape and reel STF10P6F6 TO-220FP 10P6F6 STP10P6F6 TO-220 Tube STU10P6F6 IPAK July 2015 DocID022967 Rev 5 1/24 This is information on a product in full production. www.st.comContents STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 9 4 Package information 10 4.1 DPAK package information . 10 4.2 DPAK packing information 13 4.3 TO-220FP package information 15 4.4 TO-220 package information 17 4.5 IPAK package information 19 5 Revision history . 23 2/24 DocID022967 Rev 5