STD11N50M2, STF11N50M2 Datasheet N-channel 500 V, 0.45 typ., 8 A MDmesh M2 Power MOSFETs in DPAK and TO-220FP packages Features V T R max. I Order code Package DS Jmax DS(on) D TAB STD11N50M2 DPAK 3 550 V 0.53 8 A 2 STF11N50M2 TO-220FP 1 3 2 1 Extremely low gate charge TO-220FP DPAK Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected D(2, TAB) Applications G(1) Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 S(3) AM01475V1 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status STD11N50M2 STF11N50M2 Product summary Order code STD11N50M2 Marking 11N50M2 Package DPAK Packing Tape and reel Order code STF11N50M2 Marking 11N50M2 Package TO-220FP Packing Tube DS10177 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD11N50M2, STF11N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 8 A D C I Drain current (continuous) at T = 100 C 5 A D C (1) I Drain current (pulsed) 32 A DM P Total power dissipation at T = 25 C 85 25 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt Insulation withstand voltage (RMS) from all three leads V 2.5 kV ISO to external heat sink (t=1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 8 A, di/dt 400 A/s, V < V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 400 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP R Thermal resistance junction-case 1.47 5 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 C/W thj-amb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 2 A AR (pulse width limited by T Max) j Single pulse avalanche energy E 190 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10177 - Rev 3 page 2/22