STF100N6F7 STMicroelectronics

STF100N6F7 N-channel 60 V, 4.6 m typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF100N6F7 60 V 5.6 m 46 A25 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness 2 )3 7 Applications Switching applications Figure 1. Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal * capacitance and gate charge for faster and more efficient switching. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STF100N6F7 100N6F7 TO-220FP Tube February 2015 DocID027211 Rev 3 1/13 This is information on a product in full production. www.st.comContents STF100N6F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID027211 Rev 3