STF10N60DM2 STMicroelectronics

STF10N60DM2 N-channel 600 V, 0.440 typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features V R DS DS(on) Order code ID PTOT T max. Jmax. STF10N60DM2 650 V 0.530 8 A 25 W Fast-recovery body diode Extremely low gate charge and input 3 2 capacitance 1 Low on-resistance 100% avalanche tested TO-220FP Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STF10N60DM2 10N60DM2 TO-220FP Tube June 2016 DocID029381 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STF10N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220FP package information ........................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID029381 Rev 1