STL12N10F7 STMicroelectronics

STL12N10F7 Datasheet N-channel 100 V, 11.3 m typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V R max. I DS DS(on) D STL12N10F7 100 V 13.3 m 12 A Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications D(5, 6, 7, 8) 8 7 6 5 Switching applications Description G(4) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1 2 3 4 AM15810v1 Product status link STL12N10F7 Product summary Order code STL12N10F7 Marking 12N10 Package PowerFLAT 3.3x3.3 Packing Tape and reel DS12044 - Rev 2 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STL12N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 44 A D C (1) I Drain current (continuous) at T = 100 C 28 A C D (1)(2) I Drain current (pulsed) 176 A DM (3) I Drain current (continuous) at T = 25 C 12 A pcb D (3) I Drain current (continuous) at T = 100 C 7 A D pcb (2)(3) I Drain current (pulsed) 48 A DM (1) P Total dissipation at T = 25 C 52 W TOT C (3) P Total dissipation at T = 25 C 3 W pcb TOT T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. This value is rated according to R . thj-c 2. Pulse width is limited by safe operating area. 3. This value is rated according to R . thj-pcb Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb max. 42.8 C/W thj-pcb R Thermal resistance junction-case max. 2.4 C/W thj-case 1. When mounted on an FR-4 board of 1 inch, 2oz Cu, t < 10 s. DS12044 - Rev 2 page 2/13